Author Affiliations
Abstract
College of Physics and Engineering, Qufu Normal University, Qufu 273165
Porous silicon (PS) light-emitting diode (LED) with an ITO/PS/p-Si/Al structure was fabricated by anodic oxidation method. Photoluminescence (PL) of the PS LED was measured with a peak at 593 nm, and electroluminescence (EL) was measured with a peak at 556 nm under the conditions of 7.5-V forward bias and 210-mA current intensity. The spectral width of EL was measured to be about 160 nm.
230.3670 Light-emitting diodes 310.6860 Thin films, optical properties 250.5230 Photoluminescence Chinese Optics Letters
2006, 4(5): 05297
